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| VSM ITAVM ITRMS ITSM VT0 rT = = = = = = 6500 V 1580 A 2480 A 29700 A 1.2 V 0.458 m Bi-Directional Control Thyristor 5STB 18U6500 Doc. No. 5SYA1037-02 Apr. 02 * * * * * Two thyristors integrated into one wafer Patented free-floating silicon technology Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate. The electrical and thermal data are valid for one thyristor half of the device. Blocking Maximum rated values Symbol VSM VRM IRM dV/dtcrit Conditions f = 5 Hz, tp = 10ms f = 50 Hz, tp = 10ms VRM, Tj = 110C Exp. to 0.67 x VDRM, Tj = 110C 5STB 18U6500 5STB 18U6200 5STB 18U5800 6500 V 5600 V 6200 V 5300 V 600 mA 2000 V/s 5800 V 4900 V Mechanical data Parameter Mounting force Acceleration Acceleration Weight Surface creepage distance Air strike distance Symbol Conditions FM a a m DS Da 53 22 Device unclamped Device clamped 3.6 min 120 typ. 135 max 160 50 100 Unit kN m/s m/s kg mm mm 2 2 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5STB 18U6500 On-state Parameter Max. average on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral On-state voltage Threshold voltage Slope resistance Holding current Symbol Conditions ITAVM Half sine wave, Tc = 70C min 1580 2480 tp = 10 ms, Tj = 110C, V = VR=0 V tp = 8.3 ms, Tj = 110C, V = VR=0 V IT = 1600 A, Tj= 110C IT = 1000 A - 3000 A, Tj= 110C Tj = 110C Tj = 25C Tj = 110C 29700 4400 31800 4190 1.93 1.2 0.458 125 75 typ. max Unit A A A kA2s A kA2s V V m mA mA Max. RMS on-state current ITRMS ITSM I2t ITSM I2t VT VT0 rT IH Switching Parameter Critical rate of rise of onstate current Critical rate of rise of onstate current Delay time Turn-off time Symbol Conditions di/dtcrit di/dtcrit td tq Cont. Tj = 110C, ITRM = 2000 A, f = 50 Hz VD 0.67VRM, Cont. IFG = 2 A, tr = 0.5 s f = 1Hz VD = 0.4VRM, IFG = 2 A, tr = 0.5 s Tj = 110C, ITRM = 2000 A, VR = 200 V, diT/dt = -1.5 A/s, VD 0.67VRM, dvD/dt = 20V/s, Tj = 110C, ITRM = 2000 A, VR = 200 V, diT/dt = -1.5 A/s 2100 min typ. max 250 1000 3 800 Unit A/s A/s s s Recovery charge Qrr 3200 As Triggering Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Gate non-trigger current Peak forward gate voltage Max. rated peak forward gate current Peak reverse gate voltage Max. rated peak forward gate power Symbol Conditions VGT IGT VGD IGD VFGM IFGM VRGM For DC gate current see Fig. 9 PGM Tj = 25C Tj = 25C VD = 0.4 x VRM, Tvjmax = 110C VD = 0.4 x VRM 0.3 10 12 10 10 3 min typ. max 2.6 400 Unit V mA V mA V A V W Max. rated gate power loss PG ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1037-02 Apr. 02 page 2 of 5 5STB 18U6500 Thermal Parameter Operating junction temperature range Symbol Conditions Tj -40 Double side cooled Anode side cooled Cathode side cooled Thermal resistance case to RthCH heatsink Double side cooled Single side cooled Analytical function for transient thermal impedance: min typ. max 110 140 8 16 16 1.6 3.2 Unit C C K/kW K/kW K/kW K/kW K/kW Storage temperature range Tstg Thermal resistance junction RthJC to case ZthJC(t) = a Ri(1 - e -t/ i ) i =1 i Ri(K/kW) i(s) 1 5.11 0.9531 2 1.63 0.1541 3 0.85 0.0211 4 0.45 0.0068 Fig. 1 Transient thermal impedance junction to case n Fig. 2 Isothermal on-state characteristics Fig. 3 Isothermal on-state characteristics ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1037-02 Apr. 02 page 3 of 5 5STB 18U6500 Fig. 4 On-state power dissipation vs. mean onstate current. Switching losses excluded. Fig. 5 Max. permissible case temperature vs. mean on-state current. Fig. 6 Surge on-state current vs. pulse length. Halfsine wave. Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1037-02 Apr. 02 page 4 of 5 5STB 18U6500 IG (t) 100 % 90 % IGM IGM IGon diG/dt tr tp(IGM) 2..5 A 1.5 IGT 2 A/s 1 s 5...20s diG/dt 10 % tr tp (IGM) tp (IGon) t IGon Fig. 8 Recommendet gate current waveform. Fig. 9 Max. rated peak gate power loss. Fig. 10 Recovery charge vs. decay rate of on-state current. Fig. 11 Peak reverse recovery current vs. decay rate of on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abbsem.com Doc. No. 5SYA1037-02 Apr. 02 |
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